Image Sensor

ABSTRACT

Disclosed is an image sensor. The image sensor includes a substrate having photodiodes therein; a dielectric layer on the substrate; a passivation layer on the dielectric layer exposing the dielectric layer in a region corresponding to a first color filter; and a color filter layer on the exposed dielectric layer and the passivation layer.

This application is a divisional of U.S. patent application Ser. No.11/894,906, filed on Aug. 21, 2007, which claims the benefit of KoreanPatent Application No. 10-2006-0082724 (filed on Aug. 30, 2006) and10-2006-0083477 (filed on Aug. 31, 2006), which are hereby incorporatedby reference in their entirety.

BACKGROUND

Embodiments of the invention relate to an image sensor and methods ofmaking and using the same.

In general, an image sensor is a semiconductor device for convertingoptical images into electric signals, and may be classified into acharge coupled device (CCD) and a CMOS (Complementary Metal OxideSilicon) image sensor. The CMOS image sensor includes a photodiode andat least one MOS transistor in each unit pixel, and sequentially detectsthe electric signals of each unit pixel through the MOS transistor in aswitching mode.

In an image sensor manufacturing process according to a related art, apassivation layer is formed, and then a color filter layer is formed.However, there is a disadvantage in that a relatively large amount oflight may be lost in the passivation layer due to the lighttransmittance characteristics of the passivation layer.

In a pinned photodiode according to the related art, p-type impurity ionimplantation is performed in order to reduce or prevent dark currentfrom being generated on a surface of the photodiode. Therefore, there isa problem in that the color reproducibility of blue (B) light having ashort wavelength is reduced in a reaction with a surface of a substrate(Si) as compared with green (G) or red (R) colors under the samecondition. Further, p-type impurity ions are generally implanted into asurface of Si to prevent dark current on the surface of the Si in apinned photodiode manufacturing process according to the related art.

However, since blue light has a short wavelength and thus has aphotodiode reception range shorter than other colors, a reaction isinduced near the surface of the Si. Electrons produced due to thereception of blue light are captured in the aforementioned p-typeregion. As a result, an output for blue light may deteriorate. That is,according to the related art, since the reaction (or reception) regionof blue light is induced near the surface of the Si, there is a problemin that electron generation may be influenced by the implanted p-typeregion.

SUMMARY

Embodiments of the invention provide an image sensor capable ofimproving color reproducibility depending on colors.

According to one aspect, there is provided an image sensor, whichincludes a substrate having photodiodes therein; a dielectric layer onthe substrate; a passivation layer on the dielectric layer exposing thedielectric layer in a region corresponding to a first color filter; anda color filter layer on the exposed dielectric layer and the passivationlayer.

According to another aspect, there is provided an image sensor, whichincludes an isolation layer on a substrate; active regions formed in thesubstrate such that a region corresponding to a first color is deeperthan that corresponding to another color; an ion implantation region onan entire surface of the active regions; a photodiode region beneath theion implantation region; and a dielectric layer on the substrate.

According to still another aspect, there is provided an image sensor,which includes active regions in a substrate; an ion implantation regionon an entire surface of the active regions; a photodiode region beneaththe ion implantation region; a dielectric layer on the substrate suchthat a region corresponding to the first color is higher than thatcorresponding to another color; and a color filter layer on thedielectric layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a sectional view of an exemplary image sensor according to afirst embodiment;

FIGS. 2 to 4 are sectional views illustrating an exemplary manufacturingprocess of the image sensor according to the first embodiment;

FIG. 5 is a sectional view of an exemplary image sensor according to asecond embodiment;

FIGS. 6 to 8 are sectional views illustrating an exemplary manufacturingprocess of the image sensor according to the second embodiment; and

FIG. 9 is a sectional view of an exemplary image sensor according to athird embodiment.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Hereinafter, an image sensor and a method of manufacturing the sameaccording to various embodiments will be described with reference to theaccompanying drawings.

In the description of the following embodiments, it will be understoodthat when a layer (or film) is referred to as being ‘on’ another layeror substrate, it can be directly on another layer or substrate, orintervening layers may also be present. Further, it will be understoodthat when a layer is referred to as being ‘under’ another layer, it canbe directly under another layer, and one or more intervening layers mayalso be present. In addition, it will also be understood that when alayer is referred to as being ‘between’ two layers, it can be the onlylayer between the two layers, or one or more intervening layers may alsobe present.

Embodiment 1

FIG. 1 is a sectional view of an exemplary image sensor according to afirst embodiment.

The image sensor according to the first embodiment may include aninterlayer dielectric layer 110 formed on a substrate 100 havingphotodiodes 105 therein; a passivation layer 120 formed on theinterlayer dielectric layer 110, exposing the interlayer dielectriclayer 110 in a region corresponding to a predetermined color filter; acolor filter layer 130 formed on the passivation layer 120; aplanarization layer 150 (see FIG. 4) formed on the color filter layer130; and micro-lenses 160 (see FIG. 4) formed on the planarization layer150.

In the image sensor according to the first embodiment, the color filterlayer 130 is formed on the passivation layer 120 for the purpose ofcolor reproduction. A portion of the passivation layer 120 beneath thecolor filter layer 130 is removed, so that color reproducibility can beimproved. Particularly, blue light, having a relatively short wavelength(e.g., from about 400 nm to about 480 nm), is incident onto thephotodiode 105 via a blue color filter 132, and electrons are thengenerated near a surface of the Si. For this reason, a distance to thesurface of the substrate (Si) is important in the color filter layer130.

Further, SiN which may be used as a layer in the passivation layer 120often has less than optimal transmittance, and thus characteristics of aCIS are greatly influenced by the SiN. Therefore, such a problem,particularly the color reproducibility for blue, is improved in thearrangement of passivation and color filter layers 120 and 130 in thisfirst embodiment.

Meanwhile, in the first embodiment, an output for a color having anoutput ratio lower than other colors in each color filter of green/redcan be increased through the same method as well as the colorreproducibility for blue. For example, when considering in a design ofan image sensor that there may be a preference for red over othercolors, a passivation layer beneath a red color filter can be removed toimprove the color reproducibility of red, so that certain customers'demands can be met, and sales of products can be increased.

In the image sensor according to the first embodiment, a passivationlayer for a specific color filter (e.g., blue) is removed, to improvethe likelihood (e.g., so that it is highly likely that) thecorresponding light/color reaches the corresponding photodiode. Further,the transmittance of the corresponding color can be increased, so thatthe reproducibility of the corresponding color can be remarkablyincreased. In the image sensor according to the first embodiment, sincelight passing through the blue color filter 132 has lost less light thanother colors, an output for blue light is increased. As a result, thecolor reproducibility for the blue can be improved.

Although a portion of the passivation layer 120 corresponding to theblue color filter 132 is removed and a portion thereof corresponding toa green color filter 134 is not removed in the first embodiment, thepresent invention is not limited thereto. That is, according to thefirst embodiment, there is an advantage in that an output for one colorhaving an output ratio lower than other colors in the presence of acontinuous passivation layer 120 (i.e., one of the blue, green, or redcolor filters) can be increased through the same method (e.g., byremoving the passivation layer portion below the first color filter,without removing it below the other color filters). The invention isequally operable for a yellow/cyan/magenta (YCM) color filter systemand/or for improving the relative output of two of the three colorfilters. Similarly, the color output of one or two color filters may beimproved in part by partially etching through the portion of thepassivation layer 120 below the color filter 132 or 134 (e.g., byperforming a timed etch of the passivation layer 120). In one example,the portion of the passivation layer 120 below blue filters 132 may becompletely removed, the portion of the passivation layer 120 below redfilters 134 may completely remain (i.e., not be etched at all), and theportion of the passivation layer 120 below green filters (not shown) maybe completely partially removed (i.e., have a thickness less than thethickness of the passivation layer 120 below the red filters).

FIGS. 2 to 4 are sectional views illustrating a manufacturing process ofthe image sensor according to the first embodiment. The process ofmanufacturing the image sensor according to the first embodiment is asfollows.

As shown in FIG. 2, an interlayer dielectric layer 110 is first formedon a substrate 100 having photodiodes 105 therein. Here, the interlayerdielectric layer 110 may comprise a multi-layered structure. Althoughnot shown in this figure, one interlayer dielectric layer may be formed,a light shielding layer (not shown) for preventing light from beingincident onto (e.g., blocking light from) other portions except for thephotodiodes 105 may be formed, and another interlayer dielectric layermay be then formed again. In various embodiments, the dielectric layercomprises one or more oxide layers (e.g., silicon dioxide, formed fromchemical vapor deposition [which may be plasma-assisted] of an oxideprecursor such as silane or TEOS, generally in the presence of anoxidizing agent such as dioxygen and/or ozone), and the light shieldinglayer may comprise a material having light absorbing properties (such asa metal, amorphous or polycrystalline silicon, silicon carbide (whichmay further comprise oxygen and/or hydrogen) etc.

After that, a passivation layer 120 is formed on the interlayerdielectric layer 110. The passivation layer 120 generally comprises anorganic layer, such as a polymer (e.g., a conventional photoresist), butit may alternatively or additionally comprise silicon nitride and/orsilicon dioxide. The organic passivation layer 120 may have a thicknessof about 50 nm or less, and then be subjected to a hard cure. That is,to enhance the profile and uniformity of a color filter layer 130 to beformed later, the passivation layer 120 preferably includes an organicmaterial having superior transparency in a visual light wavelength.Alternatively, the passivation layer 120 may comprise or consistessentially of SiN.

After that, a photoresist pattern 140 opening a region corresponding toa predetermined color filter may be formed on the passivation layer 120.For example, the photoresist pattern 140 may open a blue, green or redcolor filter region. In one first embodiment, a photoresist patternopening the blue color filter region is formed.

As shown in FIG. 3, the opened and/or exposed passivation layer 120 isetched using the photoresist pattern 140 as an etching mask, therebyexposing the interlayer dielectric layer in the predetermined (e.g.,blue) color filter region. In one embodiment (e.g., when the passivationlayer 120 comprises SiN), the photoresist pattern 140 may be removed andthe passivation layer 120 used as a hard mask.

As shown in FIG. 4, a color filter layer 130 is formed on the etchedpassivation layer 120 and the exposed interlayer dielectric layer 110.In forming the color filter layer 130, a coating and patterning processis performed on the passivation layer 120 using a dyeable resist,thereby forming the color filter layer 130 including R, G and B colorfilters (e.g., 132 and 134) for filtering light for each wavelengthband. Here, the color filter layer 130 is completed by formingrespective R, G and B color filters through three-time photolithographyprocesses selectively performed with respect to R, G and B color resistlayers.

At this time, after forming the respective R, G and B (or Y, C and M)color filters, UV exposure is then performed, so that an unstable stateof the surfaces of the R, G and B color filters can be improved.Particularly, in the first embodiment, an opened blue color filter 132may be formed on the exposed interlayer dielectric layer 110 (e.g., theblue color filter 132 may be formed directly on the exposed interlayerdielectric layer 110, after the passivation layer 120 in thecorresponding region has been removed), and a green color filter 134 anda red color filter (not shown; alternatively, a red color filter 134 anda green color filter [not shown]) may be formed in a color filter regionthat is not opened (e.g., on a corresponding region of the passivationlayer 120 that has not been removed or that has been partially removed).That is, in the method of manufacturing the present image sensoraccording to one embodiment, a passivation layer for a blue color filterregion is removed, so that the likelihood that blue light reaches aphotodiode is increased. Further, since the transmittance of the bluelight can be increased, the reproducibility of the blue color photodiodeand/or pixel can be remarkably increased. It will be apparent that anoutput for a color having an output ratio lower than other colors (e.g.,corresponding to the green and/or red color filters) can be increasedthrough the same method.

After that, a conventional planarization layer 150 is formed on thecolor filter layer 130, and micro-lenses 160 are conventionally formedon the planarization layer 150. The planarization layer may comprise oneor more materials capable of being easily planarized (e.g., aconventional transparent resist material, which can be planarized byreflowing the resist at a temperature of from 150 to 200 or 250° C., ora silicon dioxide material that can be planarized by chemical mechanicalpolishing [CMP]).

As described above, in an image sensor and a manufacturing methodthereof according to a first embodiment of the invention, since lightpassing through a predetermined (e.g., blue) color filter has lost asmaller amount than light of other colors, an output for a bluephotodiode and/or pixel is increased. As a result, the reproducibilityfor blue photodiode and/or pixel can be improved. Further, according tothe first embodiment, there is an advantage in that an output for acolor having an output ratio lower than other colors can be increasedthrough the same method.

Embodiment 2

Although the improvement of sensitivity for blue light will also bedescribed in a second embodiment, the basic concept of the embodiment isnot limited to the blue.

FIG. 5 is a sectional view of an image sensor according to a secondembodiment.

The image sensor according to the second embodiment may include anisolation layer (e.g., shallow trench isolation structures 230) formedon a substrate 210; active regions formed in the substrate 210 such thata region corresponding to a predetermined color is lower than thatcorresponding another color; an ion implantation region formed on theentire surface of the active regions; a photodiode region 220 formedbeneath the ion implantation region; an interlayer dielectric layer 240formed on the substrate 210 having the photodiode region 220; a colorfilter layer 250 formed on the interlayer dielectric layer 240; andmicro-lenses 260 (see FIG. 8) formed on the color filter layer 250.

In one embodiment, a red (R) photodiode (not shown), a green (G)photodiode 224 and a blue (B) photodiode 222 are formed in respectivephotodiode regions 220. Further, the color filter layer 250 includes ared (R) color filter (not shown), a green (G) color filter 254 and ablue (B) color filter 252, corresponding to the green (G) and blue (B)photodiodes 222 and 224.

In addition, the second embodiment may further include a passivationlayer (not shown) formed on the interlayer dielectric layer 240. At thistime, the color filter layer 250 is formed on the passivation layer.

In the second embodiment, the active regions have a depth difference(e.g., a distance from the uppermost surface of dielectric layer 240[which may be coplanar over all of the active regions] to the uppermostsurface of the underlying active region) of 10 to 100 nm, and thus adistance D2 (see FIG. 8) at which a predetermined (e.g., blue) lightreaches the photodiode is optimized so that the color reproducibilityfor the predetermined light (e.g., blue) can be improved.

FIGS. 6 to 8 are sectional views illustrating a manufacturing process ofthe image sensor according to the second embodiment. Although theimprovement of sensitivity for blue light will be described in thesecond embodiment, the basic concept of the embodiment is not limited toenhancing blue light sensitivity. The manufacturing process of the imagesensor according to the second embodiment is as follows.

As shown in FIG. 6, an isolation layer including isolation structures230 are first formed in the substrate 210 to define active regions.Preferably, isolation structures 230 comprise shallow trench isolation(STI) structures.

After that, a photoresist pattern 235 exposing an active regioncorresponding to a predetermined color is formed as shown in FIG. 7. Atthis time, although the predetermined color is blue as an example, it isnot limited thereto.

Thereafter, the exposed active region is etched by a predeterminedthickness or to a predetermined depth using the photoresist pattern 235as an etching mask such that the heights of light receiving portions inthe subsequently formed photodiode regions for different colors aredifferent.

At this time, in the second embodiment, the active regions have a depthor height difference of 10 to 100 nm (similar to the first embodimentdescribed above), and thus a distance D2 at which blue light reaches theblue photodiode 222 is optimized, so that the color reproducibility forthe blue photodiode 222 and/or pixel can be improved.

After that, the manufacturing process of the image sensor is progressedas shown in FIG. 8. That is, the photoresist pattern 235 is removed, andone or more ion implantation regions are formed on the entire surface ofthe etched active region. In one embodiment, the ion implantation regionmay be a p-type ion implantation region, such as a (deep) P well.Alternatively or additionally, the ion implantation region may be arelatively shallow inversion or surface layer of a P-N photodiode. Afterthat, a photodiode region 220 is formed beneath the ion implantationregion. At this time, a red (R) photodiode (not shown), a green (G)photodiode 224 and a blue (B) photodiode 222 are formed in the active(photodiode) regions 220.

Thereafter, an interlayer dielectric layer 240 is formed on thesubstrate 210 having the photodiode regions 220 therein. The interlayerdielectric layer 240 may comprise a multi-layered structure, as for thefirst embodiment. Although not shown in this figure, one interlayerdielectric layer may be formed, a light shielding layer (not shown) forpreventing light from being incident onto other portions except for thecorresponding photodiode region 220 may be formed, and anotherinterlayer dielectric layer may be then formed again, as for the firstembodiment.

Subsequently, a passivation layer (not shown) for protecting an elementagainst moisture and scratch may be formed on the interlayer dielectriclayer 240. The passivation layer may comprise an inorganic or organiclayer. The passivation layer may have a thickness of about 50 nm orless, and (when organic) be then subjected to a hard cure. That is, toenhance the profile and uniformity of a color filter layer 250 to beformed later, the passivation layer preferably includes an organicmaterial having superior transparency in a visual light wavelength.

After that, a coating and patterning process is performed on theinterlayer dielectric layer 240 (or the passivation layer in a casewhere it is formed) using a dyeable resist, thereby forming apredetermined color filter for the color filter layer 250 for filteringlight for each wavelength band. The color filter layer 250 generallyincludes a red (R) color filter (not shown), a green (G) color filter254 and a blue (B) color filter 252, the last two corresponding to thephotodiode regions 224 and 222, respectively. Alternatively, the colorfilter layer 250 may include a yellow (Y) color filter, a cyan (C) colorfilter and a magenta (M) color filter.

Here, the color filter layer 250 is completed by forming respective R, Gand B color filters through three photolithography processes selectivelyperformed with respect to R, G and B color resist layers, although theexact sequence of forming the layers is not generally essential to theinvention. At this time, after forming the respective R, G and B colorfilters, UV exposure is then performed, so that an unstable state of thesurfaces of the R, G and B color filters can be improved.

After that, a planarization layer (not shown) is formed on the colorfilter layer 250 in order to adjust a focus distance and secure a planarupper surface for subsequently forming a lens layer. Thereafter,micro-lenses 260 are formed on the color filter layer 250 (or theplanarization layer in a case where it is formed). The micro-lenses 260may be formed by depositing, exposing, developing and reflowing a resistpattern for micro-lenses.

In the manufacturing method of the image sensor according to the secondembodiment, light receiving portions of photodiodes are selectivelyetched by a predetermined thickness or to a predetermined depth suchthat the heights of the light receiving portions of photodiodes fordifferent colors are different. Accordingly, a region receiving bluelight can be optimized, so that the color reproducibility for the bluephotodiode and/or pixel can be improved.

Embodiment 3

FIG. 9 is a sectional view of an image sensor according to a thirdembodiment.

The image sensor according to the third embodiment may include activeregions defined by isolation layer 230 formed on a substrate 210; an ionimplantation region formed on the entire surface of the active regions;a photodiode region 220 formed beneath the ion implantation region; aninterlayer dielectric layer 245 formed on the substrate 210 includingthe photodiode regions 220 such that a region corresponding to apredetermined color is lower than that corresponding to another color; acolor filter layer 250 formed on the interlayer dielectric layer 245;and micro-lenses 260 formed on or over the color filter layer 250.Optionally, a passivation layer (not shown) may be further formed on theinterlayer dielectric layer 245, and the passivation layer may be etchedas in the first embodiment.

The image sensor according to the third embodiment has a problem to besolved and a principle for solving the problem in common with the secondembodiment. That is, in the second embodiment, an active region thatincludes a light receiving portion is etched such that blue light mayreach an optimal position of a photodiode, thereby adjusting a (focal)distance at which the blue light is received in the CIS device. In thethird embodiment, the interlayer dielectric layer 245 or passivationlayer (not shown) is also etched such that blue reaches an optimalposition of a photodiode.

The manufacturing method of the image sensor according to the thirdembodiment may employ methods of the first and/or second embodiment.However, the third embodiment is different from the second embodiment ina method of etching the interlayer dielectric layer 245 (or passivationlayer) in place of or in addition to the active region. Themanufacturing method of the image sensor according to the thirdembodiment is as follows.

First, an isolation layer 230 is formed on a substrate 210 to defineactive regions, then one (or two) of the active regions may be etched(e.g., by a timed etch of the silicon substrate) to a predetermineddepth to form a height or depth difference of from 10 to 100 nm, as inthe second embodiment, to optimize a distance at which a predetermined(e.g., blue) light reaches the photodiode so that the reproducibilityfor the predetermined light (e.g., blue) can be improved. Thereafter, anion implantation region is formed on the entire surfaces of the activeregions. In one embodiment, the ion implantation region is relativelyshallow, as in the second embodiment.

After that, photodiode regions 220 (e.g., 222, 224) are formed beneaththe ion implantation region, and an interlayer dielectric layer 245 isformed on the substrate 210 having the photodiode regions 220 therein.Subsequently, a photoresist pattern (not shown) exposing an region ofthe interlayer dielectric layer 245 corresponding to a predeterminedcolor (e.g., blue) is formed on the interlayer dielectric layer 245, andthe exposed interlayer dielectric layer 245 is etched by a predeterminedthickness or to a predetermined depth using the photoresist pattern asan etching mask.

At this time, in the third embodiment, the interlayer dielectric layer245 may also have a depth or height difference of 10 to 100 nm, as inthe first embodiment, and thus a (focal) distance at which blue lightreaches the blue photodiode 222 may be further optimized, so that thecolor reproducibility for the blue light, photodiode, and/or pixel canbe improved.

Thereafter, the photoresist pattern is removed, and a color filter layer250 is formed on the etched interlayer dielectric layer 245. Further, inthe third embodiment, a passivation layer (not shown) may be furtherformed on the interlayer dielectric layer 245. The passivation layer maybe etched to have a step difference, as in the first embodiment (insteadof or in addition to the interlayer dielectric layer 245), and the colorfilter layer 250 may be formed on the passivation layer. Furthermore, inthe third embodiment, a planarization layer 255 may be further formed onthe color filter layer 250. Micro-lenses 260 are then formed on theplanarization layer 255, or if desired (e.g., the color filter layer 250has a planar upper surface), on the color filter layer 250.

According to the third embodiment, the interlayer dielectric layer 245or passivation layer (not shown) is selectively etched such that theheights of (or focal distances of) light receiving portions of thephotodiodes are different. Accordingly, a photodiode region receivingblue light may have an optimized focal distance, so that the colorreproducibility for the blue photodiode and/or pixel can be improved.

As described above, in an image sensor and a manufacturing methodthereof, portions of materials over light receiving photodiodes can beselectively etched by a predetermined thickness or depth such that theheights or focal distances of the light receiving portions of thephotodiodes are different. Accordingly, a region receiving apredetermined color (e.g., blue) may have an optimized focal distance,so that the color reproducibility for the blue light can be improved.

Further, according to the third embodiment, there is an advantage inthat sensitivity for a predetermined color (e.g., blue) can be improved.

Furthermore, according to the third embodiment, an interlayer dielectriclayer or passivation layer can be selectively etched such that theheights or focal distances of light receiving portions of photodiodesare different. Accordingly, a region receiving a predetermined color(e.g., blue) may be optimized, so that the color reproducibility for theblue light can be improved.

Any reference in this specification to “one embodiment,” “anembodiment,” “example embodiment,” etc., means that a particularfeature, structure, or characteristic described in connection with theembodiment is included in at least one embodiment of the invention. Theappearances of such phrases in various places in the specification arenot necessarily all referring to the same embodiment. Further, when aparticular feature, structure, or characteristic is described inconnection with any embodiment, it is submitted that it is within thepurview of one skilled in the art to effect such feature, structure, orcharacteristic in connection with other embodiments.

Although embodiments have been described with reference to a number ofillustrative embodiments thereof, it should be understood that numerousother modifications and embodiments can be devised by those skilled inthe art that will fall within the spirit and scope of the principles ofthis disclosure. More particularly, various variations and modificationsare possible in the component parts and/or arrangements of the subjectcombination arrangement within the scope of the disclosure, the drawingsand the appended claims. In addition to variations and modifications inthe component parts and/or arrangements, alternative uses will also beapparent to those skilled in the art.

1. An image sensor comprising: an isolation layer on a substrate; activeregions in the substrate such that a region corresponding to a firstcolor is deeper than a region corresponding to another color; an ionimplantation region on an entire surface of the active regions; aphotodiode region in the substrate beneath the ion implantation region;and a dielectric layer on the substrate.
 2. The image sensor as claimedin claim 1, further comprising: a color filter layer on the dielectriclayer; and micro-lenses on or over the color filter layer.
 3. The imagesensor as claimed in claim 2, wherein the color filter layer has no stepdifference.
 4. The image sensor as claimed in claim 2, furthercomprising a planarization layer on the color filter layer.
 5. The imagesensor as claimed in claim 1, wherein the active regions have a depthdifference of 10 to 100 nm.
 6. The image sensor as claimed in claim 1,further comprising a passivation layer on the dielectric layer.
 7. Theimage sensor as claimed in claim 1, wherein the first color is green. 8.The image sensor as claimed in claim 1, wherein the isolation layercomprises shallow trench isolation structures.
 9. The image sensor asclaimed in claim 1, wherein the ion implantation region forms arelatively shallow inversion layer or a surface layer of a P-Nphotodiode in the photodiode region.
 10. The image sensor as claimed inclaim 1, wherein the dielectric layer comprises a multi-layer structure.11. An image sensor comprising: active regions in a substrate; an ionimplantation region on an entire surface of the active regions; aphotodiode region beneath the ion implantation region; a dielectriclayer on a substrate such that a region corresponding to a first coloris higher than that corresponding to another color; and a color filterlayer on the dielectric layer.
 12. The image sensor as claimed in claim11, further comprising micro-lenses on the color filter layer.
 13. Theimage sensor as claimed in claim 11, wherein the color filter layer hasa step difference between colors.
 14. The image sensor as claimed inclaim 13, wherein a first color filter corresponding to the first coloris higher than that corresponding to another color.
 15. The image sensoras claimed in claim 11, wherein the dielectric layer has a depthdifference of 10 to 100 nm.
 16. The image sensor as claimed in claim 11,further comprising a passivation layer on the dielectric layer.
 17. Theimage sensor as claimed in claim 16, wherein the passivation layer has astep difference.
 18. The image sensor of claim 11, wherein the firstcolor is green.
 19. The image sensor of claim 11, further comprising anisolation layer that defines the active regions, wherein a first one ofthe active regions has a height or depth difference of from 10 to 100 nmrelative to a second one of the active regions.